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IXTK 140N20P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
TO-264 (IXTK) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
R G = 3.3 ? (External)
50
84
7500
1800
280
30
35
150
S
pF
pF
pF
ns
ns
ns
t f
90
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q g(on)
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
240
50
100
0.15
nC
nC
nC
0.18 ° C/W
° C/W
A
A1
A2
b
b1
b2
c
D
E
e
J
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
K
L
L1
0.00 0.25
20.32 20.83
2.29 2.59
.000 .010
.800 .820
.090 .102
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
P
Q
Q1
R
R1
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
I S
V GS = 0 V
140
A
S
T
6.04 6.30
1.57 1.83
.238 .248
.062 .072
I SM
V SD
t rr
Q RM
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
180
3.5
280
1.5
A
V
ns
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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